Impact of Body Thickness Fluctuation in Nanometre Scale UTB SOI MOSFETs on SRAM Cell Functionality
نویسندگان
چکیده
Ultra Thin Body (UTB) SOI MOSFETs are increasingly competitive for nanometre scale VLSI applications due to superior electrostatic integrity compared to conventional MOSFETs. The possibility to use undoped channels in such devices also dramatically reduces the random dopant induced parameter fluctuations. To fully realise performance benefits of UTB SOI based circuits a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact of body-thickness fluctuations on 6T SRAM static noise margin characteristics has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of 6T SRAM based on a conventional 35nm MOSFET is also presented.
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