Trends in R&D in TSV Technology for 3D LSI Packaging
نویسندگان
چکیده
Small, high-speed, and multi-functional computers and other electronic devices have been enabled by high integration technologies that have come to reality by the miniaturization through the LSI process scaling which uses a very fine pattern. However, an upper limit in the progress of such miniaturization has come into sight. The miniaturization will be technologically limited due to the increase of leak current which generates heat in transistors, and signal delay time caused by wiring. 3D packaging technology is one of the technologies that are expected to make a breakthrough such miniaturization on a 2D surface, which will enable high density integration that does not depend on miniaturization on 2D surfaces. By stacking LSI chips, which would conventionally be set out on a plane, it will be possible to produce LSI components, with the same functionality as that of the components produced by conventional methods, and with a smaller footprint. The 3D packaging key technologies are electrical packaging technology, which means that it is vital to connect the stacked chips electrically. Conventional 2
منابع مشابه
TSV MEOL (Mid-End-Of-Line) and its Assembly/Packaging Technology for 3D/2.5D Solutions
Increasing demand for new and more advanced electronic products with a smaller form factor, superior functionality and performance with a lower overall cost has driven semiconductor industry to develop more innovative and emerging advanced packaging technologies. One of the hottest topics in the semiconductor industry today is a 3D packaging using Through Silicon Via (TSV) technology. Driven by...
متن کاملReliability of key technologies in 3D integration
3D IC packaging offers miniaturization, high performance, low power dissipation, high density and heterogeneous integration. Through-silicon via (TSV) and bonding technologies are the key technologies of 3D IC, and the corresponding reliability has to be well evaluated and qualified before real production applications. This paper reviews the emerging 3D interconnection technologies in worldwide...
متن کاملElectrical Modeling of a Through Silicon Via
3D IC is emerging as a powerful solution for the next-generation system packaging and integration technology to achieve low power consumption, high channel bandwidth and high density integration capability simultaneously. As for the vertical interconnect for a 3D IC, through-silicon via (TSV) is a key component which can provide a significant performance improvement with greatly reduced physica...
متن کاملThermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.11.001 ⇑ Corresponding author. E-mail address: [email protected] (Y.-L. Shen). Thermo-mechanical reliability is an important issue for the development and deployment of the throughsilicon-via (TSV) technology in three-dimensional (3D) microelectronic packaging. The mismatch in coefficient of thermal expansion (CTE) betwe...
متن کاملISSCC 2012 / SESSION 10 / HIGH - PERFORMANCE DIGITAL / 10 . 6 10 . 6 3 D - MAPS : 3 D Massively Parallel Processor with Stacked Memory
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1-4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256K...
متن کامل