A 3-Terminal Model for Diffused and Ion-Implanted Resistors
نویسندگان
چکیده
In this paper, we present a new, physically based 3-terminal model for diffused and ion-implanted resistors. The model accounts for the effects of geometry, temperature, and bias, and includes parasitic p-n junction diodes. The junction depletion capacitances are distributed to model high-frequency behavior accurately.
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