Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes

Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5μm to 4μm) and different active...

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Midwave infrared InAs/GaSb superIattice photodiode with a dopant-free p-n junction

Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p-n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p-n...

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the abs...

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes

In this study, we examine processes limiting the performance of 4 micron superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage current (x300), while small mesa sizes are additionally limited by perimeter leakage (x20). At room temperatur...