X-ray spectrometry investigation of electrical isolation in GaN

Synthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method

Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...

Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement.

Ultra-low-energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN-In(x)Ga(1-x)N (x approximately 0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN-In(x)Ga(1-x)N restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently,...

Investigation of factors affecting isolation of needle-shaped particles in a vacuum agitated filter drier through non-invasive measurements by Raman spectrometry

Isolation of bergenin from the root bark of Securinega virosa and evaluation of its potential sleep promoting effect

Objectives: Securinega virosa Roxb (Ex Willd) Baill (Euphorbaiceae) root bark has been reportedly used in African traditional medicine in the management of mental illnesses. Previously, the sleep-inducing potential of the crude methanol root bark of Securinega virosa extract and its butanol fraction have been reported. The study aimed to isolate and characterize the bioactive constituent that m...

Physical and electrical properties of chemical vapor grown GaN Nano/microstructures.

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area ...