Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
نویسندگان
چکیده
منابع مشابه
Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance
In the present work we suggest a recipe for finding tetragonal Heusler compounds with perpendicular magnetic anisotropy (PMA) that also exhibit large tunneling magnetoresistance (TMR) when used as electrodes in magnetic tunnel junction devices with suitable tunneling barrier materials. We performed density-functional theory calculations for 286 Heusler compounds and identified 116 stable tetrag...
متن کاملAnisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...
متن کاملLarge tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% were obtained in junctions with a very thin (5 1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing the b...
متن کاملVery large magnetoresistance in graphene nanoribbons
Graphene has unique electronic properties, and graphene nanoribbons are of particular interest because they exhibit a conduction bandgap that arises due to size confinement and edge effects. Theoretical studies have suggested that graphene nanoribbons could have interesting magneto-electronic properties, with a very large predicted magnetoresistance. Here, we report the experimental observation...
متن کاملStrain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature Communications
سال: 2018
ISSN: 2041-1723
DOI: 10.1038/s41467-018-04953-8