Study on the Glass Silicon Anodic Direct Bonding Parameters
نویسندگان
چکیده
منابع مشابه
Study on the Glass Silicon Anodic Direct Bonding Parameters
By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445 0 C to 455 0 C, bonding time is 60s, the void fraction is less than 5%. Glass and silicon wafer bonding quality can achieve the best. The experimental resu...
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ژورنال
عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science
سال: 2016
ISSN: 2502-4760,2502-4752
DOI: 10.11591/ijeecs.v1.i1.pp71-77