Structural Characterization and Electron Tunneling at n-Si/SiO2/SAM/Liquid Interface

ELECTRON ACCUMULATION AT THE n-ZnSe/n-GaAs INTERFACE

Evidence for electron accumulation in the ZnSe side of n-ZnSe/n-GaAs heterostructures is presented. An n-GaAs buffer layer, approximately 1 pm thick, grown with low 1015 electronic concentration on a semi-insulating (100) GaAs substrate is fully depleted of electrons when an additional epilayer of nZnSe is grown on top of it. The n-GaAs epilayer electron concentration is restored when the ZnSe ...

Structural and chemical interface characterization of CdTe solar cells by transmission electron microscopy

CdTeyCdS thin film solar cells have been grown by high-vacuum evaporation (HVE) and close-space sublimation. To understand the role of Cl on the microstructure and composition of the CdTeyCdS layers and interfaces, the cells were annealed for different durations after different amounts of CdCl had been deposited. Transmission electron microscopy shows a loss of 2 orientational relationship betw...

Electron tunneling and superconductivity.

Large electron-phonon coupling at an interface.

The strength of electron-phonon coupling in atomically uniform films of Ag on Fe is determined by angle-resolved photoemission from quantum well states in these films over a wide temperature range. As the film thickness is reduced, contributions from the surface and interface should become more important, and, experimentally, a large enhancement with superimposed quantum oscillations is observe...

Indirect Electron Tunneling

Indirect electron tunneling is observed in germanium diodes by detecting small perturbations in their I-V characteristics at low temperatures that occur when the applied potential equals the energy of emitted phonons. Frequencies of the observed phonons are calculated to a comparable degree of accuracy (±0.3E12 Hz) with neutron scattering data. Electronic differentiation, used to closely inspec...