Simulation of Silicon on Insulator Tunnel FET (SOI TFET) Dosimeter
نویسندگان
چکیده
This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout study in order to examine creation e--h+ pairs oxide field predict device’s features from region where transistor operation around pinch-off voltage significant agglomeration area. It was found that presence a field, radioactivity-persuaded reduction shift boundary trapped electrons could not be unnoticed. Furthermore, properties TFET were compared those MOSFET with intention ascertaining its competency dosimeter. The Γ model Silvaco-TCAD utilised determine efficiency SOI TFET.
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ژورنال
عنوان ژورنال: Advances in transdisciplinary engineering
سال: 2022
ISSN: ['2352-751X', '2352-7528']
DOI: https://doi.org/10.3233/atde220760