منابع مشابه
Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides
Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence ...
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With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching memory (RRAM) raises strong interest due to its high speed, high density as a result of its simple two-terminal structure, and low cost of fabrication. The s...
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G. Lucovsky 1, 2, , J. G. Hong, C. C. Fulton, Y. Zou, R. J. Nemanich, H. Ade, D. G. Scholm, and J. L. Freeouf 5 1 Department of Physics, North Carolina State University, USA 2 Department of Materials Science & Engineering, North Carolina State University, USA 3 Department of Electrical & Computer Engineering, North Carolina State University, USA 4 Department of Materials Science & Engineering, ...
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© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 5799 wileyonlinelibrary.com issues associated with energy security and environmental pollution. [ 1–5 ] Oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER) are the most crucial electrochemical reactions to realize energy storage and conversion in these technologies. Although Pt-, Ir-, and Ru-ba...
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ژورنال
عنوان ژورنال: Theoretical Chemistry Accounts
سال: 2017
ISSN: 1432-881X,1432-2234
DOI: 10.1007/s00214-017-2130-y