Recent advances in metal-organic vapor phase epitaxy

Indirectly Pumped 3.7 THz InGaAs/InAlAs Quantum-Cascade Lasers Grown by Metal-Organic Vapor-Phase Epitaxy

Device-performances of 3.7 THz indirect-pumping quantumcascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum o...

High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force microscopy (AFM) and x-ray diffraction (XRD) results reveal that the nucleation layer plays a critical role...

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...

Catalyst-free growth of high-optical quality GaN nanowires by metal- organic vapor phase epitaxy

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