Raman scattering of ZnSe grown by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
Photoluminescence of d-doped ZnSe:„Te,N... grown by molecular beam epitaxy
We have studied the low temperature photoluminescence ~PL! of a d-doped ZnSe:~Te,N! system using two different types of samples, one with single d layers separated by undoped spacers and the other with three adjacent d layers in each doping cycle. We have concluded that both Te and N participate in radiative recombination. We observe a relatively low PL efficiency ~compared to samples without N...
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ژورنال
عنوان ژورنال: Journal of Chemical Sciences
سال: 1990
ISSN: 0253-4134,0973-7103
DOI: 10.1007/bf03040786