Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging solution to photonic integration in bulk substrates where color centers best defined. We model triangular cross-section waveguides and crystal cavities using Finite-Difference Time-Domain Eigensolver approaches. analyze optimal center positioning within modes these devices provide estimates on achievable Purcell enhancement nanocavities with applications communications. Using open system modeling, we explore emitter-cavity interactions multiple non-identical coupled both single cavity molecule SiC. observe polariton subradiant state formation cavity-protected regime electrodynamics applicable simulation.