PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES
نویسندگان
چکیده
منابع مشابه
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram dat...
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ژورنال
عنوان ژورنال: «Узбекский физический журнал»
سال: 2018
ISSN: 2181-077X,1025-8817
DOI: 10.52304/.v20i4.95