Plasma?Enhanced Atomic Layer Deposition of Al ₂ O ₃ on Graphene Using Monolayer hBN as Interfacial Layer

The deposition of dielectric materials on graphene is one the bottlenecks for unlocking potential in electronic applications. plasma enhanced atomic layer 10 nm thin high quality aluminum oxide (Al2O3) demonstrated using a monolayer hexagonal boron nitride (hBN) as protection layer. Raman spectroscopy performed to analyze possible structural changes lattice caused by deposition. results show that hBN combination with an optimized process can effectively protect from damage, while significant damage observed without Electrical characterization double gated field effect devices confirms does not degrade during Al2O3. leakage current densities are consistently below 1 pA µm?2 electric fields across insulators up 8 MV cm?1, irreversible breakdown happening above. Such typical Al2O3 and be seen indicator films.