Optimization of the spray-deposited carbon nanotube semiconducting channel for electrolyte-gated field-effect transistor-based biosensing applications

نویسندگان

چکیده

Electrochemical biosensors are widely investigated as they represent attractive analytical tools for detection of a broad range bio-molecules, thanks to their simplicity, high sensitivity and short response time. Especially, employing an electrolyte-gated field-effect transistors (EG-FETs) electrochemical transduction element have gained increasing interest, due the signal amplification intrinsic low voltage operation. In this work we report fabrication flexible EG-FETs using spray-deposited semiconducting carbon nanotubes (CNTs), with specific focus on optimization CNT channel optimize performance resulting CNT-based EG-FET (EG-CNTFET). The transfer output characteristic different devices varying spraying parameters were tested, finding out that only source-drain resistance about ≤10 kΩ showed proper EG-CNTFET operation: these recorded typical p-type behavior on–off ratio 214 A/A up 469 (depending number layers). fabricated EG-CNTFETs functionalized anti-spermidine antibodies detect polyamine spermidine - well-known chemical indicator food quality. To ensure controlled immobilization at same time preserve electrical properties nanotubes, films modified bifunctional molecule, which attaches via non-covalent π interactions leaves free NHS-ester group amide coupling antibodies. EG-CNTFET-based immunosensors linear from 10-3 102 nM, sensitivities ranging -1.03 -2.45 μA/decade.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Polymer Electrolyte-Gated Carbon Nanotube Field-Effect Transistor

Single-walled carbon nanotube field-effect transistors were fabricated using solid electrolyte (PEO plus LiClO4) as gating materials. The SWNT FETs demonstrated strong gate-channel coupling with improved device characteristics compared with back-gated devices. More importantly, the nanotubes can be easily doped using different concentrations of electron acceptor mixed in the polymer materials. ...

متن کامل

Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor

Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...

متن کامل

Flexible, Low-Cost Sensor Based on Electrolyte Gated Carbon Nanotube Field Effect Transistor for Organo-Phosphate Detection

A flexible enzymatic acetylcholinesterase biosensor based on an electrolyte-gated carbon nanotube field effect transistor is demonstrated. The enzyme immobilization is done on a planar gold gate electrode using 3-mercapto propionic acid as the linker molecule. The sensor showed good sensing capability as a sensor for the neurotransmitter acetylcholine, with a sensitivity of 5.7 μA/decade, and d...

متن کامل

DNA-templated carbon nanotube field-effect transistor.

The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assemb...

متن کامل

Integrated Circuit Design Based on Carbon Nanotube Field Effect Transistor

Copyright 2011 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Sensors Journal

سال: 2022

ISSN: ['1558-1748', '1530-437X']

DOI: https://doi.org/10.1109/jsen.2022.3162706