Multiscale model for phonon-assisted band-to-band tunneling in semiconductors
نویسندگان
چکیده
منابع مشابه
Simulation of Phonon-Assisted Band-to Band Tunneling in Carbon Nanotube Field-Effect Transistors
متن کامل
Metallic-nanoparticle assisted enhanced band-to-band tunneling current
Metallic nanoparticle assisted band-to-band tunneling is proposed, and the impact of such nanoparticle induced states on the tunneling probability and current is modeled and analyzed. An analytical formula for tunneling probability is derived for the case of constant force, and it is shown that the incorporation of these particles in the forbidden gap can lead to a substantial increase in the t...
متن کاملA New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling
The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V cur...
متن کاملTemperature dependence of band gaps in semiconductors: Electron-phonon interaction
We have theoretically investigated, by ab initio techniques, the phonon properties of several semiconductors with chalcopyrite structure. Comparison with experiments has led us to distinguish between materials with d electrons in the valence band (e.g., CuGaS2, AgGaS2) and those without d electrons (e.g., ZnSnAs2). The former exhibit a rather peculiar nonmonotonic temperature dependence of the ...
متن کاملTemperature dependence of band gaps in semiconductors: electron-phonon interaction
Most of the experimental results for the temperature dependence of gaps have been obtained for elemental or binary semiconductors.[1] Lately, however, ternary materials such as those with chalcopyrite structure have begun to be investigated. Among the chalcopyrites under examination are II-IV-V2 compounds (e.g. ZnGeAs2) and those in which the divalent cation is replaced by either monovalent cop...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4790628