Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Minority carrier lifetime and surface effects in VLS-grown axial p-n junction silicon nanowires.

High aspect ratio p–n junction semiconductors have displayed great potential for emerging photovoltaics owing to enhanced properties such as improved light absorption or trapping effi ciency and facile carrier collection. [ 1–4 ] In the case of bottomup synthesized p–n junction nanowires, additional advantages come from their single-crystalline structure and reduced materials usage, coupled wit...

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

The effect of oxide precipitates on minority carrier lifetime in n-type silicon

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

(2016) Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC...

Millisecond minority carrier lifetimes in n-type multicrystalline silicon