Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer for 4H-SiC metal-oxide-semiconductor applications. C-V measurements reveal that HfO2/SiO2/Al2O3/4H-SiC structure exhibits lower interface state density (Dit) a reduced number fixed trap charges (Neff) than HfO2/Al2O3/SiO2/4H-SiC structure. Furthermore, observe significant degradation properties when annealing at 400 ∘ compared with 300 ∘, as evidenced by force microscopy images. Transmission electron analysis shows SiO2/SiC surface is inhomogeneous contains carbon clusters, while Al2O3/SiC displays more uniform The I-V curves demonstrate leakage current stacked to (10-11 A/cm), breakdown electric field reaches 9.6 MV/cm.