Investigation of blistering kinetics in hydrogen implanted aluminium nitride

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Failure Investigation of Hydrogen Blistering on Low-strength Carbon Steel

The current study assesses the root causes of hydrogen blisters on low strength carbon steel equipment. For this purpose, some experiments including hardness test, non-destructive test (NDT), metallography, and fractograpghy are conducted. The microstructure of two blisters is assessed by means of optical microscopy and scanning electron microscopy (SEM). The microstructural studies show that t...

متن کامل

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

متن کامل

failure investigation of hydrogen blistering on low-strength carbon steel

the current study assesses the root causes of hydrogen blisters on low strength carbon steel equipment. for this purpose, some experiments including hardness test, non-destructive test (ndt), metallography, and fractograpghy are conducted. the microstructure of two blisters is assessed by means of optical microscopy and scanning electron microscopy (sem). the microstructural studies show that t...

متن کامل

Investigation of germanium implanted with hydrogen for layer transfer applications

The technology for thin Ge layer transfer by hydrogen ion-cut process is characterised in this work. Experiments were carried out to determine suitable hydrogen ion implantation doses in germanium for the low temperature ion cut process by examining the formation of blisters on implanted samples. Raman and Spreading Resistance Profiling (SRP) have been used to analyse defects in germanium cause...

متن کامل

Thermal and electrical conductivity of Aluminium Nitride nanofluids

This study was designed to experimentally measure the thermal and electrical conductivities of Aluminium Nitride/Ethylene Glycol (AlN/EG) nanofluids. Transmission electron microscopy (TEM) was used to characterize the shape of AlN nanoparticles. Nanofluids with different particle volume concentrations of 0.5%, 1%, 2%, 3%, 4%, and 5% were utilized. The thermal and electrical conductivities of the...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2008

ISSN: 0268-1242,1361-6641

DOI: 10.1088/0268-1242/23/4/045007