Increasing the retained dose by plasma immersion ion implantation and deposition
نویسندگان
چکیده
منابع مشابه
Dose–time relation in BF3 plasma immersion ion implantation
Semiconductor devices with shallow junctions can be fabricated using plasma immersion ion implantation. In this technique BF3 gas has been used as the boron dopant source due to its low toxicity. Not only are ions implanted but, because of the fluorine ions, there is etching and deposition at the wafer surface. Therefore, the relationship between total dose and processing time is not straightfo...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implanta...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1995
ISSN: 0168-583X
DOI: 10.1016/0168-583x(95)80129-a