Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate
نویسندگان
چکیده
منابع مشابه
High-rate deposition of amorphous silicon films using hot-wire CVD with a coil-shaped filament
To reduce the manufacturing cost of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit highquality a-Si:H and related materials at a high deposition rate. To this end, we designed and constructed a hot-wire deposition chamber with a coiled filament design and with multiple gas inlets. The process gas could be directed into the chamber through the filament coil and...
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We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition HWCVD . Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and i the substrate temperature 230–350 °C and ii the hydrogen dilution ratio H2/SiH4=0–4...
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Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2011
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.01.296