Highly efficient ultraviolet photodetector based on molybdenum-doped nanostructured NiO/ITO thin film

Abstract Nanostructured pure and molybdenum (Mo)-doped nickel oxide (NiO) thin films with various concentrations of Mo dopants were successfully sputtered on indium-doped tin (ITO) substrates to apply in the ultraviolet (UV) photodetector sensors. The influence concentration films' structural, morphological, optical properties was studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) equipped energy-dispersive X-ray, UV–Vis spectrophotometer. XRD studies confirm that all prepared are polycrystalline possess a cubic phase structure. FE-SEM images suggest distribution samples substrate is homogeneous free from any cracks. Spectrophotometry reveal decrement band gap increase NiO films. All thin-film current–voltage curves measured under dark conditions UV illumination 390 nm showed Ohmic contacts. A noticeable improvement responsivity external quantum efficiency (EQE) increased detected. metal–semiconductor–metal (MSM) employed maximum EQE 539 mA/W 171.4% at nm, respectively, for sample 1.73 at% doping.