High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation
نویسندگان
چکیده
A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, 2s, 2p, C O 1s core levels.
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ژورنال
عنوان ژورنال: Surface Science Spectra
سال: 2022
ISSN: ['1055-5269', '1520-8575']
DOI: https://doi.org/10.1116/6.0001512