Heteroepitaxial B12As2 on silicon substrates
نویسندگان
چکیده
منابع مشابه
Dynamics of step bunching in heteroepitaxial growth on vicinal substrates.
When a heteroepitaxial film is grown on a vicinal substrate, the terrace steps at the growth front may bunch together to relieve strain, resulting in a rough surface. On the other hand, proper manipulation of the growth kinetics may suppress the inherent bunching instability, thus preserving step-flow growth. Here we show that the step dynamics in the early stages of growth can already determin...
متن کاملHeteroepitaxial Cu2O thin film solar cell on metallic substrates
Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser depos...
متن کاملHeterogeneous lithium niobate photonics on silicon substrates.
A platform for the realization of tightly-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding and selective oxidation of refractory metals. The heterogeneous photonic platform is employed to demonstrate high-performance lithium niobate microring optical resonators and Mach-Zehnder optical modulators. A quality factor of ~7.2 × 10⁴ is m...
متن کاملNanocrystalline silicon thin films on PEN substrates
We study the structural and electrical properties of intrinsic layers growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200oC. Electrical properties of these films als...
متن کاملHigh-Tc SQUIDs on Silicon Substrates
We have developed high-?;. SQUIDs based on Josephson step-edge junctions on silicon substrates. The SQUIDs show a transfer function up to 150 pVIQ,, and a white noise of lV5 @JHz" at 50 K. During the last three years extensive investigations of the growth of YBCO, buffer and passivation layers as well as step-preparation and patterning processes were necessary to find a standard preparation pro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2006
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.04.092