Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology
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چکیده
منابع مشابه
Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp<sup>2</sup>-on-sp<sup>3</sup> Technology
Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown current density on the order of 1 μA/ nm (i.e., 10 A/cm), which is ∼100× larger than the fundamental limit for the metals but still smaller than the maximum a...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2012
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl204545q