First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

This article reports on the first demonstration of distributed amplifier monolithic microwave integrated circuits (MMICs) with a bandwidth (BW) more than 300 GHz. The three presented utilize uniform traveling-wave topology six, eight, and ten unit cells, respectively. In this article, impact connection between gate line transistors achievable performance is investigated. It demonstrated that short clearly provides favorable combination BW, input matching, losses line. Thus, it possible to extend BW beyond GHz while utilizing width 2×10 μm. MMICs are fabricated in 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor technology. MMIC six cells exhibits noise figure (NF) 3.5 8.2 dB for noise-optimized bias from 1 up measurement limit 308 achieves minimum NF 2 frequencies around 50 stays below 10 entire band. Furthermore, power-optimized bias, same circuit generates an output power 8.7 14.8 dBm frequency range 250