Evidence for shallow acceptors in GaN

Luminescence of Acceptors in Mg-Doped GaN

Dual nature of acceptors in GaN and ZnO: The curious case of the shallow Mg Ga deep state

Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy

GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samp...

Muonium as a shallow center in GaN.

A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the <0001> direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c axis. Its small ionization energy (<or=...

Zeeman splitting of shallow donors in GaN

The Zeeman splitting of the donor spectra in cubic and hexagonal GaN is studied using an effective mass theory approach. Soft-core pseudopotentials were used to describe the chemical shift of the different substitutional dopants. The donor ground states calculated range from 29.5 to 33.7 meV, with typically 1 meV higher binding in the hexagonal phase. Carbon is found to produce the largest dono...