EUV Interference Lithography for 22nm Node and Below

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

Approach to EUV Lithography Simulation

High-resolution and large-area nanoparticle arrays using EUV interference lithography.

Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and...

Modeling and optimization of mass-limited targets for EUV Lithography

Current challenges in the development of efficient laser produced plasma (LPP) sources for EUV lithography are increasing EUV power at IF and maximizing lifetime and therefore, reducing cost of devices. Mass-limited targets such as small tin droplets are considered among the best choices for cleaner operation of the optical system because of lower mass of atomic debris produced by the laser bea...

Longer Wavelength EUV Lithography (LW-EUVL)

Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Several challenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scaling may suggest a transition to shorter EUVL wavelengths, several issues arise that would make that difficult. Challenges involve issues such as flare, multilaye...