Electrical Transport Properties of Single-Layer WS2
نویسندگان
چکیده
منابع مشابه
Electrical transport properties of single-layer WS2.
We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in situ annealing drastically improves the contact transparency, allowing four-terminal measurements to be performed and the pri...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2014
ISSN: 1936-0851,1936-086X
DOI: 10.1021/nn502362b