Efficient Current-Induced Domain-Wall Displacement inSrRuO3
نویسندگان
چکیده
منابع مشابه
Efficient current-induced domain-wall displacement in SrRuO3.
We demonstrate current-induced displacement of ferromagnetic domain walls in submicrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10(9)-10(10) A/m2 is sufficient for domain-wall di...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2007
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.98.247204