Dielectric Function of Native Oxide on Ion-Implanted GaAs

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ion implanted dielectric elastomer circuits

Starfish and octopuses control their infinite degreeof-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielec...

متن کامل

DIFFUSION OF SILICON IN ION IMPLANTED GaAs

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...

متن کامل

Extended defects of ion-implanted GaAs

Ion-implantation-induced extended defect formation and annealing processes have been studied in GaAs. Mg, Be, Si, Ge, and Sn ions were implanted between 40 and 185 keV over the dose range of 1 X 10t3-1 X 1015/cm2. Furnace annealing after capping with S&N4 was performed between 700 and 900 “C for times between 5 min and 10 h. Plan-view and crosssectional transmission electron microscopy results ...

متن کامل

Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

Measuring with a spectroscopic ellipsometer (SE) in the 1.845 eV photon energy region we determined the complex dielectric function (E = e1 + ieZ> of different kinds of amorphous silicon prepared by self-implantation and thermal relaxation (500 “C, 3 h) . These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a-Si (i-a-Si) differs from ...

متن کامل

Multilayer Dielectric Elastomer Actuators with Ion Implanted Electrodes

We present the design, fabrication process and characterization of multilayer miniaturized polydimethylsiloxane (PDMS)-based dielectric elastomer diaphragm actuators. The conductive stretchable electrodes are obtained by lowenergy metal ion implantation. To increase force, decrease the required voltage, and avoid dielectric breakdown, we present here a technique to fabricate multilayer devices ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2013

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.123.956