Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

transistor A. V. Muraviev, S. L. Rumyantsev, G. Liu, A. A. Balandin, W. Knap, and M. S. Shur ECSE and PAPA Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–River...

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Graphene field-effect transistors as room-temperature terahertz detectors.

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very pro...

Coulomb drag mechanisms in graphene.

Recent measurements revealed an anomalous Coulomb drag in graphene, hinting at new physics at charge neutrality. The anomalous drag is explained by a new mechanism based on energy transport, which involves interlayer energy transfer, coupled to charge flow via lateral heat currents and thermopower. The old and new drag mechanisms are governed by distinct physical effects, resulting in starkly d...

Helicity sensitive terahertz radiation detection by field effect transistors

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