Comparative Analysis of VDMOS/LDMOS Power Transistors for RF Amplifiers
نویسندگان
چکیده
منابع مشابه
RF Power Amplifiers for Cellphones
A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies will be reviewed and compared.
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This article is based on “Class-E High-Efficiency Power Amplifiers, from HF to Microwave,” Proceedings of the IEEE International Microwave Symposium, June 1998, Baltimore; and “ClassE Switching-Mode High-Efficiency Tuned RF Microwave Power Amplifier: Improved Design Equations,” Proceedings of the IEEE International Microwave Symposium, June 2000, Boston; both by Nat Sokal, © IEEE 1998, 2000.—Ed.
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iii Populärvetenskaplig sammanfattning v Preface vii Contributions xi Abbreviations xiii Acknowledgments xv
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As the mobile phone is an essential accessory for everyone nowadays, predistortion for the RF power amplifiers in mobile phone systems becomes more and more popular. Especially, new predistortions for power amplifiers with both nonlinearities and memory effects interest the researchers. In our thesis, novel predistortion techniques are presented for this purpose. Firstly, we improve the digital...
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ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2009
ISSN: 0018-9480,1557-9670
DOI: 10.1109/tmtt.2009.2031932