Characterization of SnTe films grown by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy
SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room tem...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2006
ISSN: 0103-9733
DOI: 10.1590/s0103-97332006000300024