منابع مشابه
Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO~001! by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5310 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling ~RBS/C! and x-ray diffraction ~XRD!. We found an epitaxial relationship of SrZrO3 (0k0) @101#iMgO ~001!...
متن کاملMgO Doped Carbon Nanotube-reinforced Al2O3 Nanocomposite
Carbon nanotubes (CNTs) are probably the strongest material ever known with outstanding mechanical, electrical and physical properties [1, 2]. It is postulated that by transferring these fabulous properties as reinforcements in inorganic matrices, a new class of nanocomposite to meet the requirement of advanced applications will be generated. Al2O3 ceramics have been widely used for structural,...
متن کاملStructural, electronic, magnetic and chemical properties of B-, C- and N-doped MgO(001) surfaces.
Doping of simple oxide materials can give rise to new exciting physical and chemical properties and open new perspectives for a variety of possible applications. Here we use density functional theory calculations to investigate the B-, C- and N-doped MgO(001) surfaces. We have found that the investigated dopants induce magnetization of the system amounting to 3, 2 and 1 μB for B, C and N, respe...
متن کاملMagnetism in C- or N-doped MgO and ZnO: a density-functional study of impurity pairs.
It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2(2+) interact antiferromagnetically in p-type MgO. For C-doped ZnO, however, we demonstrate using the Heyd-Scuseria-Ernzerhof hybrid functional th...
متن کاملEpitaxial growth of Al-Cr-N thin films on MgO(111)
Cubic rock salt structure Al0.60Cr0.40N and Al0.68Cr0.32N films of different thicknesses were grown epitaxially onto MgO(111) substrates by reactive unbalanced magnetron sputtering at 500°C. Rutherford backscattering spectroscopy reveals stoichiometric nitrides with Al/Cr ratios close to the ones of the used compound targets of 60/40 and 70/30. High resolution xray diffraction proves epitaxial ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.86.075455