Anelasticity of GaN Epitaxial Layer in GaN LED
نویسندگان
چکیده
منابع مشابه
Passivation of GaAs surface by ultrathin epitaxial GaN layer
Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...
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Various methods to grow high quality and perfectly arranged ZnO nanorods have been reported over the recent years (see, e.g., [1, 2] and references therein). However, due to the material properties of ZnO and its related compounds, there are many restrictions in designing more complex heterostructures or even devices based on such nanorods. In particular p-type doping of ZnO is still a big, yet...
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This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in ...
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ژورنال
عنوان ژورنال: Materials Research Express
سال: 2016
ISSN: 2053-1591
DOI: 10.1088/2053-1591/3/10/105026