AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity

In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity devices investigated experimentally in detail for first time. Transistors with different conventional planar fabricated using two-step electron beam lithography (EBL). Current-voltage, resistance, small-signal, two-tone measurements performed to evaluate devices. Contrary HEMTs, intrinsic transconductance monotonically increases increasing voltage, showing a similar behavior as junction field-effect (FETs). shows polynomial increase drain current, which can be reduced by decreasing filling ratio gates. Through optimization these two competing factors, i.e., flat high is achieved experimentally. structure small-signal power gain over larger span voltage that 2.5 times higher than device. Moreover, 6.9-dB improvement output intercept point (OIP3)/P DC achieved. This approach used improve HEMTs at device level.